IEICE Trans

Hideki MURAKAMI

Control of Interfacial Reaction of HfO₂/Ge Structure by Insertion of Ta Oxide Layer Kuniaki HASHIMOTO Akio OHTA Hideki MURAKAMI Seiichiro HIGASHI Seiichi MIYAZAKI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2013/05/01 Vol. E96-C No. 5 pp. 674-679 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: Ge-channel, high-k dielectrics, interfacial control layer, X-ray photoelectron spectroscopy, energy band alignment,
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Evaluation of Chemical Composition and Bonding Features of Pt/SiO_x/Pt MIM Diodes and Its Impact on Resistance Switching Behavior Akio OHTA Katsunori MAKIHARA Mitsuhisa IKEDA Hideki MURAKAMI Seiichiro HIGASHI Seiichi MIYAZAKI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2013/05/01 Vol. E96-C No. 5 pp. 702-707 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: Resistive Random Access Memory (ReRAM), Si oxide, Pt electrodes, chemical bonding features, resistance switching,
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Characterization of Resistance-Switching of Si Oxide Dielectrics Prepared by RF Sputtering Akio OHTA Yuta GOTO Shingo NISHIGAKI Guobin WEI Hideki MURAKAMI Seiichiro HIGASHI Seiichi MIYAZAKI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2012/05/01 Vol. E95-C No. 5 pp. 879-884 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: resistive random access memory (ReRAM), Si oxide, RF sputtering, Pt electrodes, resistance switching,
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Characterization of Mg Diffusion into HfO₂/SiO₂/Si(100) Stacked Structures and Its Impact on Detect State Densities Akio OHTA Daisuke KANME Hideki MURAKAMI Seiichiro HIGASHI Seiichi MIYAZAKI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2011/05/01 Vol. E94-C No. 5 pp. 717-723 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: high-k gate dielectrics, capping layer, HfO₂, MgO, photoemission measurements,
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Impact of Annealing Ambience on Resistive Switching in Pt/TiO₂/Pt Structure Guobin WEI Yuta GOTO Akio OHTA Katsunori MAKIHARA Hideki MURAKAMI Seiichiro HIGASHI Seiichi MIYAZAKI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2011/05/01 Vol. E94-C No. 5 pp. 699-704 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: ReRAM, TiO₂, low temperature, H₂ annealing, charge trapping,
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Evaluation of Dielectric Reliability of Ultrathin HfSiO_xN_y in Metal-Gate Capacitors Yanli PEI Hideki MURAKAMI Seiichiro HIGASHI Seiichi MIYAZAKI Seiji INUMIYA Yasuo NARA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2007/05/01 Vol. E90-C No. 5 pp. 962-967 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Ultra-Thin Gate Insulators Keyword: HfSiO_xN_y, metal gate, leakage current, charge trapping, TDDB,
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Electrical Characterization of Aluminum-Oxynitride Stacked Gate Dielectrics Prepared by a Layer-by-Layer Process of Chemical Vapor Deposition and Rapid Thermal Nitridation Hideki MURAKAMI Wataru MIZUBAYASHI Hirokazu YOKOI Atsushi SUYAMA Seiichi MIYAZAKI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2005/04/01 Vol. E88-C No. 4 pp. 640-645 Type of Manuscript: Special Section PAPER (Special Section on Fundamental and Application of Advanced Semiconductor Devices) Category: Si Devices and Processes Keyword: high-k dielectrics, aluminum oxide, reliability, MISFET,
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Charging and Discharging Characteristics of Stacked Floating Gates of Silicon Quantum Dots Taku SHIBAGUCHI Mitsuhisa IKEDA Hideki MURAKAMI Seiichi MIYAZAKI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2005/04/01 Vol. E88-C No. 4 pp. 709-712 Type of Manuscript: Special Section PAPER (Special Section on Fundamental and Application of Advanced Semiconductor Devices) Category: Nanomaterials and Quantum-Effect Devices Keyword: silicon quantum dot, MOS memory, floating gate, Coulomb blockade,
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Characterization of Germanium Nanocrystallites Grown on SiO₂ by a Conductive AFM Probe Technique Katsunori MAKIHARA Yoshihiro OKAMOTO Hideki MURAKAMI Seiichiro HIGASHI Seiichi MIYAZAKI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2005/04/01 Vol. E88-C No. 4 pp. 705-708 Type of Manuscript: Special Section PAPER (Special Section on Fundamental and Application of Advanced Semiconductor Devices) Category: Nanomaterials and Quantum-Effect Devices Keyword: nanocrystal, AFM, conducting probe, local characterization,
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Characterization of Atom Diffusion in Polycrystalline Si/SiGe/Si Stacked Gate Hideki MURAKAMI Yoshikazu MORIWAKI Masafumi FUJITAKE Daisuke AZUMA Seiichiro HIGASHI Seiichi MIYAZAKI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2005/04/01 Vol. E88-C No. 4 pp. 646-650 Type of Manuscript: Special Section PAPER (Special Section on Fundamental and Application of Advanced Semiconductor Devices) Category: Si Devices and Processes Keyword: SiGe gate, gate depletion,
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