Hideaki MATSUZAKI

Advantages of SOA Assisted Extended Reach EADFB Laser (AXEL) for Operation at Low Power and with Extended Transmission Reach
Wataru KOBAYASHI Naoki FUJIWARA Takahiko SHINDO Yoshitaka OHISO Shigeru KANAZAWA Hiroyuki ISHII Koichi HASEBE Hideaki MATSUZAKI Mikitaka ITOH 
Publication:   
Publication Date: 2017/10/01
Vol. E100-C  No. 10  pp. 759-766
Type of Manuscript:  INVITED PAPER (Joint Special Section on Opto-electronics and Communications for Future Optical Network)
Category: 
Keyword: 
electro-absorption modulator, semiconductor optical amplifier, DFB laser, 
 Summary | Full Text:PDF(1.8MB)
Type-II InGaAsSb-Base Double Heterojunction Bipolar Transistors Simultaneously Exhibiting over 600-GHz fmax and 5-V Breakdown Voltage
Norihide KASHIO Takuya HOSHI Kenji KURISHIMA Minoru IDA Hideaki MATSUZAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2016/05/01
Vol. E99-C  No. 5  pp. 522-527
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
heterojunction bipolar transistors, InP, InGaAsSb, GaAsSb, 
 Summary | Full Text:PDF(1.2MB)
Novel Fabrication Technology for High Yield Sub-100-nm-Gate InP-Based HEMTs
Hideaki MATSUZAKI Takashi MARUYAMA Takatomo ENOKI Masami TOKUMITSU 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/07/01
Vol. E89-C  No. 7  pp. 949-953
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
Category: Millimeter-Wave Devices
Keyword: 
HEMT, InP, InGaAs, InAlAs, lattice-matched, current gain cutoff frequency, 
 Summary | Full Text:PDF(1.1MB)
W-Band Active Integrated Antenna Oscillator Based on Full-Wave Design Methodology and 0.1-µm Gate InP-Based HEMTs
Koji INAFUNE Eiichi SANO Hideaki MATSUZAKI Toshihiko KOSUGI Takatomo ENOKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/07/01
Vol. E89-C  No. 7  pp. 954-958
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
Category: Millimeter-Wave Devices
Keyword: 
millimeter wave, FDTD method, AIA, InP-based HEMT, 
 Summary | Full Text:PDF(1.4MB)
SCFL-Compatible 40-Gbit/s RTD/HEMT Selector Circuit
Kimikazu SANO Koichi MURATA Hideaki MATSUZAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2000/10/25
Vol. E83-C  No. 10  pp. 1690-1692
Type of Manuscript:  LETTER
Category: Electronic Circuits
Keyword: 
resonant tunneling diodes (RTDs), HEMTs, selector circuit, SCFL, lightwave communications, 
 Summary | Full Text:PDF(262.1KB)