Heiner RYSSEL


A Computationally Efficient Method for Three-Dimensional Simulation of Ion Implantation
Alexander BURENKOV Klaus TIETZEL Andreas HOSSINGER Jurgen LORENZ Heiner RYSSEL Siegfried SELBERHERR 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2000/08/25
Vol. E83-C  No. 8  pp. 1259-1266
Type of Manuscript:  Special Section PAPER (Special Issue on 1999 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'99))
Category: Process Modeling and Simulation
Keyword: 
ion implantationthree-dimensionalMonte-Carloanalyticalsimulation
 Summary | Full Text:PDF(1.9MB)

Evaluation of the Point Defect Bulk Recombination Rate by Ion Implantation at High Temperatures
Peter PICHLER Rainer SCHORK Thomas KLAUSER Heiner RYSSEL 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/02/25
Vol. E75-C  No. 2  pp. 128-137
Type of Manuscript:  Special Section PAPER (Special Issue on Selected Papers from '91 VPAD)
Category: 
Keyword: 
boronantimonydiffusionpoint defectsimplantation enhancement
 Summary | Full Text:PDF(750.4KB)