Guobin WEI


Characterization of Resistance-Switching of Si Oxide Dielectrics Prepared by RF Sputtering
Akio OHTA Yuta GOTO Shingo NISHIGAKI Guobin WEI Hideki MURAKAMI Seiichiro HIGASHI Seiichi MIYAZAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/05/01
Vol. E95-C  No. 5  pp. 879-884
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
resistive random access memory (ReRAM)Si oxideRF sputteringPt electrodesresistance switching
 Summary | Full Text:PDF

Impact of Annealing Ambience on Resistive Switching in Pt/TiO2/Pt Structure
Guobin WEI Yuta GOTO Akio OHTA Katsunori MAKIHARA Hideki MURAKAMI Seiichiro HIGASHI Seiichi MIYAZAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2011/05/01
Vol. E94-C  No. 5  pp. 699-704
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
ReRAMTiO2low temperatureH2 annealingcharge trapping
 Summary | Full Text:PDF