Guangyuan ZHAO


Improvement of CO Sensitivity in GaN-Based Gas Sensors
Eunjung CHO Dimitris PAVLIDIS Guangyuan ZHAO Seth M. HUBBARD Johannes SCHWANK 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/07/01
Vol. E89-C  No. 7  pp. 1047-1051
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
Category: GaN-Based Devices
Keyword: 
GaNgas sensorPt Schottky diodeCO
 Summary | Full Text:PDF

First Microwave Characteristics of InGaAlAs/GaAsSb/InP Double HBTs
Xin ZHU Dimitris PAVLIDIS Guangyuan ZHAO Philippe BOVE Hacene LAHRECHE Robert LANGER 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/10/01
Vol. E86-C  No. 10  pp. 2010-2014
Type of Manuscript:  Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
Category: 
Keyword: 
DHBTheterojunctionInPGaAsSb
 Summary | Full Text:PDF

A Novel Pt-AlGaN/GaN Heterostructure Schottky Diode Gas Sensor on Si
Guangyuan ZHAO William SUTTON Dimitris PAVLIDIS Edwin L. PINER Johannes SCHWANK Seth HUBBARD 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/10/01
Vol. E86-C  No. 10  pp. 2027-2031
Type of Manuscript:  Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
Category: 
Keyword: 
AlGaN/GaNgas sensorSchottky diodesensitivity
 Summary | Full Text:PDF