Fumio HARIMA


1.8 V Operation Power Amplifier IC for Bluetooth Class 1 Utilizing p+-GaAs Gate Hetero-Junction FET
Fumio HARIMA Yasunori BITO Hidemasa TAKAHASHI Naotaka IWATA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/07/01
Vol. E91-C  No. 7  pp. 1104-1108
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007)
Category: GaAs- and InP-Based Devices
Keyword: 
enhancement modehetero-junction FETspower amplifiers
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