IEICE Trans

Fumihiko TODA

Comparisons of SiN Passivation Film Deposited by PE-CVD and T-CVD Method for AlGaN/GaN HEMTs on SiC Substrate Hideyuki OKITA Toshiharu MARUI Shinichi HOSHI Masanori ITOH Fumihiko TODA Yoshiaki MORINO Isao TAMAI Yoshiaki SANO Shohei SEKI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2009/05/01 Vol. E92-C No. 5 pp. 686-690 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: AlGaN/GaN HEMTs, current collapse, SiN, passivation film, thermal CVD,
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Effects of a Thermal CVD SiN Passivation Film on AlGaN/GaN HEMTs Toshiharu MARUI Shinich HOSHI Masanori ITOH Isao TAMAI Fumihiko TODA Hideyuki OKITA Yoshiaki SANO Shohei SEKI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2008/07/01 Vol. E91-C No. 7 pp. 1009-1014 Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007) Category: GaN Process Technology Keyword: AlGaN/GaN HEMTs, thermal CVD SiN, current collapse, passivation film, gate insulator,
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Formation of (Ba, Rb) BiO₃ Thin Films by Molecular Beam Epitaxy Using Distilled Ozone Mitsuhiko OGIHARA Fumihiko TODA Takehiko MAKITA Hitoshi ABE
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1993/08/25 Vol. E76-C No. 8 pp. 1251-1260 Type of Manuscript: Special Section PAPER (Special Issue on High-Temperature Superconducting Electronics) Category: Keyword: (Rb,Ba)BiO₃, MBE, growth process, BRBO/STO(Nb),
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Formation of Au Electrodes on 80K-Phase Bi-Sr-Ca-Cu-O Single Crystal Surfaces and Their Characteristics by XPS Satoru KISHIDA Heizo TOKUTAKA Makoto CHIHAYA Wataru FUTO Fumihiko TODA Katsumi NISHIMORI Naganori ISHIHARA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1991/07/25 Vol. E74-C No. 7 pp. 1967-1971 Type of Manuscript: Special Section PAPER (Special Issue on Low Temperature Electronics) Category: Keyword:
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