Fumihiko NAKAMURA


Normally-Off AlGaN/GaN HEMTs with Thin InGaN Cap Layer
Masafumi ITO Shigeru KISHIMOTO Fumihiko NAKAMURA Takashi MIZUTANI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/07/01
Vol. E91-C  No. 7  pp. 989-993
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007)
Category: Nitride-based Devices
Keyword: 
normally-offAlGaN/GaNHEMTInGaN cap
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Electron Transport in GaSb/InAs Hot Electron Transistor Grown by Metalorganic Chemical Vapor Deposition
Kenji FUNATO Kenichi TAIRA Fumihiko NAKAMURA Hiroji KAWAI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1993/09/25
Vol. E76-C  No. 9  pp. 1384-1391
Type of Manuscript:  Special Section PAPER (Special Issue on Heterostructure Electron Devices)
Category: 
Keyword: 
hot electron transistor (HET)thermionic emissionGaSbInAs
 Summary | Full Text:PDF