Fumie FUJII


A 0.13 µm CMOS Bluetooth EDR Transceiver with High Sensitivity over Wide Temperature Range and Immunity to Process Variation
Kenichi AGAWA Shinichiro ISHIZUKA Hideaki MAJIMA Hiroyuki KOBAYASHI Masayuki KOIZUMI Takeshi NAGANO Makoto ARAI Yutaka SHIMIZU Asuka MAKI Go URAKAWA Tadashi TERADA Nobuyuki ITOH Mototsugu HAMADA Fumie FUJII Tadamasa KATO Sadayuki YOSHITOMI Nobuaki OTSUKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/06/01
Vol. E93-C  No. 6  pp. 803-811
Type of Manuscript:  Special Section PAPER (Special Section on Analog Circuits and Related SoC Integration Technologies)
Category: 
Keyword: 
CMOS wireless transceiverBluetoothsensitivitytemperature compensationphase noiseVCO pullingMOS switchleakage current
 Summary | Full Text:PDF

High-Frequency Device-Modeling Techniques for RF-CMOS Circuits
Ryuichi FUJIMOTO Osamu WATANABE Fumie FUJII Hideyuki KAWAKITA Hiroshi TANIMOTO 
Publication:   IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 2001/02/01
Vol. E84-A  No. 2  pp. 520-528
Type of Manuscript:  Special Section PAPER (Special Section on Analog Circuit Techniques Supporting the System LSI Era)
Category: 
Keyword: 
device modelmodel parameterscalinggeometric parameterprocess parameter
 Summary | Full Text:PDF