IEICE Trans

Fujio MASUOKA

Decananometer Surrounding Gate Transistor (SGT) Scalability by Using an Intrinsically-Doped Body and Gate Work Function Engineering Yasue YAMAMOTO Takeshi HIDAKA Hiroki NAKAMURA Hiroshi SAKURABA Fujio MASUOKA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2006/04/01 Vol. E89-C No. 4 pp. 560-567 Type of Manuscript: PAPER Category: Semiconductor Materials and Devices Keyword: Surrounding Gate Transistor (SGT), scaling, intrinsic channel, gate work function engineering,
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An Analysis of Program and Erase Mechanisms for Floating Channel Type Surrounding Gate Transistor Flash Memory Cells Masakazu HIOKI Hiroshi SAKURABA Tetsuo ENDOH Fujio MASUOKA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2004/09/01 Vol. E87-C No. 9 pp. 1628-1635 Type of Manuscript: PAPER Category: Semiconductor Materials and Devices Keyword: Flash memory, Surrounding Gate Transistor (SGT), floating body, program and erase operation,
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A High Performance Voltage Down Converter (VDC) Using New Flexible Control Technology of Driving Current Tetsuo ENDOH Kazutoshi NAKAMURA Fujio MASUOKA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1998/12/25 Vol. E81-C No. 12 pp. 1905-1912 Type of Manuscript: PAPER Category: Electronic Circuits Keyword: down voltage converter, driving current, power consumption, response,
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The Analysis of the Stacked-Surrounding Gate Transistor (S-SGT) DRAM for the High Speed and Low Voltage Operation Tetsuo ENDOH Katsuhisa SHINMEI Hiroshi SAKURABA Fujio MASUOKA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1998/09/25 Vol. E81-C No. 9 pp. 1491-1498 Type of Manuscript: PAPER Category: Semiconductor Materials and Devices Keyword: SGT, S-SGT, DRAM, bit-line capacitance,
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Evaluation of the Voltage Down Converter (VDC) with Low Ratio of Consuming Current to Load Current in DC/AC Operation Mode Tetsuo ENDOH Kazutoshi NAKAMURA Fujio MASUOKA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1998/06/25 Vol. E81-C No. 6 pp. 968-974 Type of Manuscript: PAPER Category: Electronic Circuits Keyword: voltage down converter, stability, response, low-power consumption,
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New Write/Erase Operation Technology for Flash EEPROM Cells to lmprove the Read Disturb Characteristics Tetsuo ENDOH Hirohisa IIZUKA Riichirou SHIROTA Fujio MASUOKA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1997/10/25 Vol. E80-C No. 10 pp. 1317-1323 Type of Manuscript: PAPER Category: Integrated Electronics Keyword: flash memory, read disturb characteristics, write/erase operation, stress leakage current,
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New Reduction Mechanism of the Stress Leakage Current Based on the Deactivation of Step Tunneling Sites for Thin Oxide Films Tetsuo ENDOH Kazuyosi SHIMIZU Hirohisa IIZUKA Fujio MASUOKA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1997/10/25 Vol. E80-C No. 10 pp. 1310-1316 Type of Manuscript: PAPER Category: Integrated Electronics Keyword: thin oxide films, stress leakage current, flash memory, step tonneling,
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An Analytic Steady-State Current-Voltage Characteristics of Short Channel Fully-Depleted Surrounding Gate Transistor (FD-SGT) Tetsuo ENDOH Tairiku NAKAMURA Fujio MASUOKA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1997/07/25 Vol. E80-C No. 7 pp. 911-917 Type of Manuscript: Special Section PAPER (Special Issue on New Concept Device and Novel Architecture LSIs) Category: Novel Structure Devices Keyword: SGT, FD-SGT, current-voltage characteristics, threshold voltage, short channel effect,
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FOREWORD Fujio MASUOKA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1997/07/25 Vol. E80-C No. 7 pp. 839-840 Type of Manuscript: FOREWORD Category: Keyword:
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An Accurate Model of Fully-Depleted Surrounding Gate Transistor (FD-SGT) Tetsuo ENDOH Tairiku NAKAMURA Fujio MASUOKA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1997/07/25 Vol. E80-C No. 7 pp. 905-910 Type of Manuscript: Special Section PAPER (Special Issue on New Concept Device and Novel Architecture LSIs) Category: Novel Structure Devices Keyword: SGT, FD-SGT, current-voltage characteristics, threshold voltage,
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A Novel Programming Method Using a Reverse Polarity Pulse in Flash EEPROMs Hirohisa IIZUKA Tetsuo ENDOH Seiichi ARITOME Riichiro SHIROTA Fujio MASUOKA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1996/06/25 Vol. E79-C No. 6 pp. 832-835 Type of Manuscript: Special Section PAPER (Special Issue on ULSI Memory Technology) Category: Nonvolatile memories Keyword: flash EEPROM, oxide leakage current, hole trap, reverse polarity pulse, read disturb,
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New α-Particle Induced Soft Error Mechanism in a Three Dimensional Capacitor Cell Yukihito OOWAKI Keiji MABUCHI Shigeyoshi WATANABE Kazunori OHUCHI Jun'ichi MATSUNAGA Fujio MASUOKA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1995/07/25 Vol. E78-C No. 7 pp. 845-851 Type of Manuscript: Special Section PAPER (Special Issue on LSI Memory Device, Circuit, Architecture and Application Technologies for Multimedia Age) Category: Keyword: α-particle, soft error, DRAM,
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Data Retention Characteristics of Flash Memory Cells after Write and Erase Cycling Seiichi ARITOME Riichiro SHIROTA Koji SAKUI Fujio MASUOKA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1994/08/25 Vol. E77-C No. 8 pp. 1287-1295 Type of Manuscript: Special Section PAPER (Special Section on High Speed and High Density Multi Functional LSI Memories) Category: Non-volatile Memory Keyword: flash EEPROM, data retention, endurance, tunnel oxide, electron traps,
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FOREWORD Fujio MASUOKA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1994/08/25 Vol. E77-C No. 8 pp. 1249-1250 Type of Manuscript: FOREWORD Category: Keyword:
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Sub-Halfmicron Flash Memory Technologies Koji SAKUI Fujio MASUOKA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1994/08/25 Vol. E77-C No. 8 pp. 1251-1259 Type of Manuscript: INVITED PAPER (Special Section on High Speed and High Density Multi Functional LSI Memories) Category: Non-volatile Memory Keyword: magnetic memory, core memory, EEPROM, flash memory, NAND EEPROM,
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A Study of High-Performance NAND Structured EEPROMS Tetsuo ENDOH Riichiro SHIROTA Seiichi ARITOME Fujio MASUOKA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1992/11/25 Vol. E75-C No. 11 pp. 1351-1357 Type of Manuscript: Special Section PAPER (Special Issue on LSI Memories) Category: Keyword: flash EEPROM, NAND EEPROM endurance, block technology, page program technology,
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Reviews and Prospects of Non-Volatile Semiconductor Memories Fujio MASUOKA Riichiro SHIROTA Koji SAKUI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1991/04/25 Vol. E74-C No. 4 pp. 868-874 Type of Manuscript: INVITED PAPER (Special Issue on LSI Memories) Category: ROM Keyword:
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