Feng-Tso CHIEN


A Novel Power MOSFET Structure with Shallow Junction Dual Well Design
Chien-Nan LIAO Feng-Tso CHIEN Chi-Ling WANG Hsien-Chin CHIU Yi-Jen CHAN 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2007/05/01
Vol. E90-C  No. 5  pp. 937-942
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Compound Semiconductor and Power Devices
Keyword: 
power VDMOSFETshallow dual wellgate chargeavalanche breakdown
 Summary | Full Text:PDF(731.6KB)

High Performance Power MOSFETs by Wing-Cell Structure Design
Feng-Tso CHIEN Chien-Nan LIAO Chi-Ling WANG Hsien-Chin CHIU 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/05/01
Vol. E89-C  No. 5  pp. 591-595
Type of Manuscript:  Special Section PAPER (Special Section on Fundamental and Application of Advanced Semiconductor Devices)
Category: Si Devices and Processes
Keyword: 
Power MOSFETclosed cellwing cellgate-drain charge (Qgd)
 Summary | Full Text:PDF(1.3MB)

High Ruggedness Power MOSFET Design by a Self-Align p+ Process
Feng-Tso CHIEN Ming-Hung LAI Shih-Tzung SU Kou-Way TU Ching-Ling CHENG 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2005/04/01
Vol. E88-C  No. 4  pp. 694-698
Type of Manuscript:  Special Section PAPER (Special Section on Fundamental and Application of Advanced Semiconductor Devices)
Category: Power Devices
Keyword: 
Power MOSFETunclamped inductive load switching (UIS)ruggedness
 Summary | Full Text:PDF(660.5KB)

Device Linearity and Gate Voltage Swing Improvement by Al0.3Ga0.7As/In0.15Ga0.85As Double Doped-Channel Design
Feng-Tso CHIEN Hsien-Chin CHIU Shih-Cheng YANG Chii-Wen CHEN Yi-Jen CHAN 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C  No. 10  pp. 1306-1311
Type of Manuscript:  Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: Hetero-FETs & Their Integrated Circuits
Keyword: 
doped-channel EFTsAl0.3Ga0.7As/In0.15Ga0.85Asdevice linearity
 Summary | Full Text:PDF(669.7KB)