Etsumasa KAMEDA


A New Test Structure for Precise Location Measurement of Hot-Carrier-Induced Photoemission Peak in Subquarter-Micron MOSFETs
Toshihiro MATSUDA Mari FUNADA Takashi OHZONE Etsumasa KAMEDA Shinji ODANAKA Kyoji TAMASHITA Norio KOIKE Ken-ichiro TATSUUMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/05/01
Vol. E85-C  No. 5  pp. 1125-1133
Type of Manuscript:  Special Section PAPER (Special Issue on Microelectronic Test Structures)
Category: 
Keyword: 
test structureMOSFEThot carrierphotoemission
 Summary | Full Text:PDF

A Study on Hot-Carrier-Induced Photoemission in n-MOSFETs
Toshihiro MATSUDA Naoko MATSUYAMA Kiyomi HOSOI Etsumasa KAMEDA Takashi OHZONE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/04/25
Vol. E82-C  No. 4  pp. 593-601
Type of Manuscript:  Special Section PAPER (Special Issue on Microelectronic Test Structures)
Category: 
Keyword: 
MOSFEThot carriersphotoemissionjunction breakdown
 Summary | Full Text:PDF