Etsuji OMURA

AlGaAs High-Power Laser Diode with Window-Mirror Structure by Intermixing of Multi-Quantum Well for CD-R
Tetsuya YAGI Yoshihisa TASHIRO Shinji ABE Harumi NISHIGUCHI Yuji OHKURA Akihiro SHIMA Etsuji OMURA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/01/01
Vol. E85-C  No. 1  pp. 52-57
Type of Manuscript:  Special Section PAPER (Special Issue on Recent Progress in Semiconductor Lasers and Light-Emitting Devices)
Category: 
Keyword: 
window-mirror structure, high-power laser diode, intermixing, implantation, carbon doping, 
 Summary | Full Text:PDF(491.1KB)
A New Broadband Buffer Circuit Technique and Its Application to a 10-Gbit/s Decision Circuit Using Production-Level 0. 5 µm GaAs MESFETs
Miyo MIYASHITA Naoto ANDOH Kazuya YAMAMOTO Junichi NAKAGAWA Etsuji OMURA Masao AIGA Yoshikazu NAKAYAMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1998/10/25
Vol. E81-C  No. 10  pp. 1627-1638
Type of Manuscript:  PAPER
Category: Electronic Circuits
Keyword: 
GaAs MESFET, buffer circuit, decision circuit, peaking inductor, source-follower, 
 Summary | Full Text:PDF(964.4KB)