Eisuke TOKUMITSU


FOREWORD
Eisuke TOKUMITSU 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2005/04/01
Vol. E88-C  No. 4  pp. 639-639
Type of Manuscript:  FOREWORD
Category: 
Keyword: 
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Ferroelectric Split-Gate-Field-Effect-Transistors for Nonvolatile Memory Cell Array
Hirokazu SAIKI Eisuke TOKUMITSU 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2004/10/01
Vol. E87-C  No. 10  pp. 1700-1705
Type of Manuscript:  Special Section PAPER (Special Section on New Era of Nonvolatile Memories)
Category: Ferroelectric Memory
Keyword: 
ferroelectric-gate transistorreadout currentsplit-gate
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FOREWORD
Eisuke TOKUMITSU 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2004/10/01
Vol. E87-C  No. 10  pp. 1655-1655
Type of Manuscript:  FOREWORD
Category: 
Keyword: 
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Electrical Properties of Sol-Gel Derived Ferroelectric Pb(Zr,Ti)O3 Films Fabricated Using Low-Pressure Consolidation Process
Takaaki MIYASAKO Masaru SENOO Eisuke TOKUMITSU 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2004/10/01
Vol. E87-C  No. 10  pp. 1694-1699
Type of Manuscript:  Special Section PAPER (Special Section on New Era of Nonvolatile Memories)
Category: Ferroelectric Memory
Keyword: 
PZTsol-gel methodFeRAMlow-pressure consolidation
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Numerical Analysis of Metal-Ferroelectric-Semiconductor Field-Effect-Transistors (MFS-FETs) Considering Inhomogeneous Ferroelectric Polarization
Tatsuya KAMEI Eisuke TOKUMITSU Hiroshi ISHIWARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1998/04/25
Vol. E81-C  No. 4  pp. 577-583
Type of Manuscript:  Special Section PAPER (Special Issue on Advanced Memory Devices Using High-Dielectric-Constant and Ferroelectric Thin Films)
Category: 
Keyword: 
ferroelectricMFSFETSrBi2Ta2O9Si non-volatile memorymemory
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