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20-Gbit/s Multiplexer and Demultiplexer ICs Using Production-Level Silicon Bipolar Transistors Eiichi SANO | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2000/02/25
Vol. E83-C
No. 2
pp. 263-265
Type of Manuscript:
LETTER Category: Integrated Electronics Keyword: Si bipolar transistor, multiplexer, demultiplexer, ECL, | | Summary | Full Text:PDF | |
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High-Speed, Low-Power Lightwave Communication ICs Using InP/InGaAs Double-Heterojunction Bipolar Transistors Eiichi SANO Kenji KURISHIMA Hiroki NAKAJIMA Shoji YAMAHATA | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 1999/11/25
Vol. E82-C
No. 11
pp. 2000-2006
Type of Manuscript:
Special Section PAPER (Special Issue on High-Frequency/High-Speed Devices for Information and Communication Systems in the 21st Century) Category: Low Power-Consumption RF ICs Keyword: InP, HBT, amplifier, flip-flop, PLL, | | Summary | Full Text:PDF | |
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InP-Based Lightwave Communication ICs for 40 Gbit/s and Beyond Eiichi SANO Yasuro YAMANE | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 1999/11/25
Vol. E82-C
No. 11
pp. 1879-1885
Type of Manuscript:
INVITED PAPER (Special Issue on High-Frequency/High-Speed Devices for Information and Communication Systems in the 21st Century) Category: Information and Communication System Keyword: InP, HEMT, analog IC, digital IC, packaging, | | Summary | Full Text:PDF | |
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IC-Oriented Self-Aligned High-Performance AlGaAs/GaAs Ballistic Collection Transistors and Their Applications to High-Speed ICs Yutaka MATSUOKA Shoji YAMAHATA Satoshi YAMAGUCHI Koichi MURATA Eiichi SANO Tadao ISHIBASHI | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 1993/09/25
Vol. E76-C
No. 9
pp. 1392-1401
Type of Manuscript:
Special Section PAPER (Special Issue on Heterostructure Electron Devices) Category: Keyword: heterojunction bipolar transistor, self-aligned structure, ballistic collection transistor, launcher, cutoff frequency, maximum oscillation frequency, multiplexer, preamplifier, selector, frequency divider, | | Summary | Full Text:PDF | |
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A Design Technique for a High-Gain, 10-GHz Class-Bandwidth GaAs MESFET Amplifier IC Module Noboru ISHIHARA Eiichi SANO Yuhki IMAI Hiroyuki KIKUCHI Yasuro YAMANE | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 1992/04/25
Vol. E75-C
No. 4
pp. 452-460
Type of Manuscript:
Special Section PAPER (Joint Special Issue on the 1991 VLSI Circuits Symposium) Category: Keyword:
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