Dondee NAVARRO


Prevention of Highly Power-Efficient Circuits due to Short-Channel Effects in MOSFETs
Arnab MUKHOPADHYAY Tapas Kumar MAITI Sandip BHATTACHARYA Takahiro IIZUKA Hideyuki KIKUCHIHARA Mitiko MIURA-MATTAUSCH Hafizur RAHAMAN Sadayuki YOSHITOMI Dondee NAVARRO Hans Jürgen MATTAUSCH 
Publication:   
Publication Date: 2019/06/01
Vol. E102-C  No. 6  pp. 487-494
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
MOSFEToptimizationpower efficient circuit designCMOSshort-channel effecttransit delays
 Summary | Full Text:PDF

Shot Noise Modeling in Metal-Oxide-Semiconductor Field Effect Transistors under Sub-Threshold Condition
Yoshioki ISOBE Kiyohito HARA Dondee NAVARRO Youichi TAKEDA Tatsuya EZAKI Mitiko MIURA-MATTAUSCH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2007/04/01
Vol. E90-C  No. 4  pp. 885-894
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
MOSFETshot noisehigh frequency noisedevice simulationsub-threshold current
 Summary | Full Text:PDF

A Compact Model of the Pinch-off Region of 100 nm MOSFETs Based on the Surface-Potential
Dondee NAVARRO Takeshi MIZOGUCHI Masami SUETAKE Kazuya HISAMITSU Hiroaki UENO Mitiko MIURA-MATTAUSCH Hans Jurgen MATTAUSCH Shigetaka KUMASHIRO Tetsuya YAMAGUCHI Kyoji YAMASHITA Noriaki NAKAYAMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2005/05/01
Vol. E88-C  No. 5  pp. 1079-1086
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
pinch-off regionchannel-length modulationoverlap capacitancesurface-potential-based modelingcircuit simulation
 Summary | Full Text:PDF

Circuit-Simulation Model of Cgd Changes in Small-Size MOSFETs Due to High Channel-Field Gradients
Dondee NAVARRO Hiroaki KAWANO Kazuya HISAMITSU Takatoshi YAMAOKA Masayasu TANAKA Hiroaki UENO Mitiko MIURA-MATTAUSCH Hans Jurgen MATTAUSCH Shigetaka KUMASHIRO Tetsuya YAMAGUCHI Kyoji YAMASHITA Noriaki NAKAYAMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/03/01
Vol. E86-C  No. 3  pp. 474-480
Type of Manuscript:  INVITED PAPER (Special Issue on the 2002 IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'02))
Category: 
Keyword: 
gate-drain capacitancesurface-potential based modelinglateral field gradientpocket-implant technology
 Summary | Full Text:PDF