Christiane POBLENZ

Review of Recent Developments in Growth of AlGaN/GaN High-Electron Mobility Transistors on 4H-SiC by Plasma-Assisted Molecular Beam Epitaxy
Andrea CORRION Christiane POBLENZ Patrick WALTEREIT Tomas PALACIOS Siddharth RAJAN Umesh K. MISHRA Jim S. SPECK 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/07/01
Vol. E89-C  No. 7  pp. 906-912
Type of Manuscript:  INVITED PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
Category: 
Keyword: 
MBE, Gallium Nitride, HEMT, microwave, MBE, 
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