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The Effect of Selectively and Fully Ion-Implanted Collector on RF Characteristics of BJT Devices Chinchun MENG Jen-Yi SU Bo-Chen TSOU Guo-Wei HUANG | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2006/04/01
Vol. E89-C
No. 4
pp. 520-523
Type of Manuscript:
Special Section LETTER (Special Section on Advanced RF Technologies for Compact Wireless Equipment and Mobile Phones) Category: Keyword: BJT, selectively implanted collector, | | Summary | Full Text:PDF | |
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A 5.7 GHz Gilbert Upconversion Mixer with an LC Current Combiner Output Using 0.35 µm SiGe HBT Technology Tzung-Han WU Chinchun MENG Tse-Hung WU Guo-Wei HUANG | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2005/06/01
Vol. E88-C
No. 6
pp. 1267-1270
Type of Manuscript:
Special Section LETTER (Special Section on Analog Circuit and Device Technologies) Category: RF Keyword: SiGe, HBT, Gilbert mixer, | | Summary | Full Text:PDF | |
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Determining GaInP/GaAs HBT Device Structure by DC Measurements on a Two-Emitter HBT Device and High Frequency Transit Time Measurements Chinchun MENG Bo-Chen TSOU Sheng-Che TSENG | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2005/06/01
Vol. E88-C
No. 6
pp. 1127-1132
Type of Manuscript:
Special Section PAPER (Special Section on Analog Circuit and Device Technologies) Category: Device Keyword: GaInP/GaAs HBT, emitter ledge, transit time measurement, | | Summary | Full Text:PDF | |
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