Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2007/05/01 Vol. E90-CNo. 5pp. 937-942 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Compound Semiconductor and Power Devices Keyword: power VDMOSFET, shallow dual well, gate charge, avalanche breakdown,
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2006/05/01 Vol. E89-CNo. 5pp. 591-595 Type of Manuscript: Special Section PAPER (Special Section on Fundamental and Application of Advanced Semiconductor Devices) Category: Si Devices and Processes Keyword: Power MOSFET, closed cell, wing cell, gate-drain charge (Qgd),