Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2008/07/01 Vol. E91-CNo. 7pp. 1004-1008 Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007) Category: Nitride-based Devices Keyword: AlGaN/GaN, heterojunction field-effect transistor, current collapse, gate bias stress,
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2008/07/01 Vol. E91-CNo. 7pp. 1020-1024 Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007) Category: GaN Process Technology Keyword: Ohmic contact, p-GaN, dry-etching, etching damage, SiCl4,
