Cheng-Yu HU


Buffer Layer Doping Concentration Measurement Using VT-VSUB Characteristics of GaN HEMT with p-GaN Substrate Layer
Cheng-Yu HU Katsutoshi NAKATANI Hiroji KAWAI Jin-Ping AO Yasuo OHNO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/08/01
Vol. E93-C  No. 8  pp. 1234-1237
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2009)
Category: GaN-based Devices
Keyword: 
AlGaN/GaN HFETVT-VSUBsubstrate biasp-GaNSIMS
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2D Device Simulation of AlGaN/GaN HFET Current Collapse Caused by Surface Negative Charge Injection
Yusuke IKAWA Yorihide YUASA Cheng-Yu HU Jin-Ping AO Yasuo OHNO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/08/01
Vol. E93-C  No. 8  pp. 1218-1224
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2009)
Category: GaN-based Devices
Keyword: 
AlGaN/GaN HFETcollapsevirtual gatepinningsurface statessimulation
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Investigation on Current Collapse of AlGaN/GaN HFET by Gate Bias Stress
Jin-Ping AO Yuya YAMAOKA Masaya OKADA Cheng-Yu HU Yasuo OHNO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/07/01
Vol. E91-C  No. 7  pp. 1004-1008
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007)
Category: Nitride-based Devices
Keyword: 
AlGaN/GaNheterojunction field-effect transistorcurrent collapsegate bias stress
 Summary | Full Text:PDF

A Study on Ohmic Contact to Dry-Etched p-GaN
Cheng-Yu HU Jin-Ping AO Masaya OKADA Yasuo OHNO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/07/01
Vol. E91-C  No. 7  pp. 1020-1024
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007)
Category: GaN Process Technology
Keyword: 
Ohmic contactp-GaNdry-etchingetching damageSiCl4
 Summary | Full Text:PDF