Changhwan SHIN


Design Optimization for Process-Variation-Tolerant 22-nm FinFET-Based 6-T SRAM Cell with Worst-Case Sampling Method
Sangheon OH Changhwan SHIN 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2016/05/01
Vol. E99-C  No. 5  pp. 541-543
Type of Manuscript:  BRIEF PAPER
Category: 
Keyword: 
random variationFinFETSRAMworst-case sampling
 Summary | Full Text:PDF(720.2KB)

Amorphous Indium Zinc Oxide Thin-Film Transistor with Steep Subthreshold Slope by Negative Capacitance
Karam CHO Jaesung JO Changhwan SHIN 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2016/05/01
Vol. E99-C  No. 5  pp. 544-546
Type of Manuscript:  BRIEF PAPER
Category: 
Keyword: 
negative capacitancesubthreshold slopea-IZOTFT
 Summary | Full Text:PDF(1.6MB)