Behzad ESFANDYARPOUR


The Influence of the Stacked and Double Material Gate Structures on the Short Channel Effects in SOI MOSFETS
Ehsanollah FATHI Ashkan BEHNAM Pouya HASHEMI Behzad ESFANDYARPOUR Morteza FATHIPOUR 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2005/06/01
Vol. E88-C  No. 6  pp. 1122-1126
Type of Manuscript:  Special Section PAPER (Special Section on Analog Circuit and Device Technologies)
Category: Device
Keyword: 
MOSFETdual metal gatestacked gateDIBLshort channel effects
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