Baokang WANG


Design and Investigation of Silicon Gate-All-Around Junctionless Field-Effect Transistor Using a Step Thickness Gate Oxide
Wenlun ZHANG Baokang WANG 
Publication:   
Publication Date: 2021/08/01
Vol. E104-C  No. 8  pp. 379-385
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
JLFETTCADGIDLBTBTGAA transistor
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