IEICE Trans

Atsushi KAMEYAMA

Ultralow-Voltage MTCMOS/SOI Circuits for Batteryless Mobile System Takakuni DOUSEKI Masashi YONEMARU Eiji IKUTA Akira MATSUZAWA Atsushi KAMEYAMA Shunsuke BABA Tohru MOGAMI Hakaru KYURAGI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2004/04/01 Vol. E87-C No. 4 pp. 437-447 Type of Manuscript: INVITED PAPER (Special Section on Low-Power System LSI, IP and Related Technologies) Category: Keyword: ultralow voltage, ultralow power, MTCMOS/SOI, batteryless, ambient energy,
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A 2-V Operation Resonant-Type T/R-Switch with Low Distortion Characteristics for 1. 9-GHz PHS Katsue K. KAWAKYU Yoshiko IKEDA Masami NAGAOKA Atsushi KAMEYAMA Naotaka UCHITOMI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1998/06/25 Vol. E81-C No. 6 pp. 862-867 Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeter-Wave Module Technology) Category: Functional Modules and the Design Technology Keyword: resonant-type, T/R-switch, low distortion, PHS, 2-V operation,
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Single Low 2. 4-V Supply Operation GaAs Power MESFET Amplifier with Low-Distortion Gain-Variable Attenuator for 1. 9-GHz PHS Applications Masami NAGAOKA Hirotsugu WAKIMOTO Toshiki SESHITA Katsue K. KAWAKYU Yoshiaki KITAURA Atsushi KAMEYAMA Naotaka UCHITOMI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1998/06/25 Vol. E81-C No. 6 pp. 911-915 Type of Manuscript: Special Section LETTER (Special Issue on Microwave and Millimeter-Wave Module Technology) Category: Keyword: power amplifier, gallium arsenide, PHS, low distortion, variable gain, single voltage supply,
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A Buried-Channel Self-Aligned GaAs MESFET with High Power-Efficiency and Low Noise-Figure for 1.9-GHz Single-Chip Front-End MMICs Kazuya NISHIHORI Atsushi KAMEYAMA Yoshiaki KITAURA Yoshikazu TANABE Masakatsu MIHARA Misao YOSHIMURA Mayumi HIROSE Naotaka UCHITOMI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1997/12/25 Vol. E80-C No. 12 pp. 1586-1591 Type of Manuscript: Special Section PAPER (Special Issue on Low-Power and High-Speed LSI Technologies) Category: Keyword: GaAs MESFET, buried channel, ion-implantation, MMIC, power-added efficiency, noise figure,
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Gate Current Control Method by Pull-Down FET's for 0-28 dB GaAs Variable Attenuator in Direct-Conversion Modulator IC for 1.9 GHz PHS Tadahiro SASAKI Shoji OTAKA Tadahiko MAEDA Toshiyuki UMEDA Kazuya NISHIHORI Atsushi KAMEYAMA Mayumi HIROSE Yoshiaki KITAURA Naotaka UCHITOMI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1997/06/25 Vol. E80-C No. 6 pp. 794-799 Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeterwave High-power Devices) Category: Keyword: GaAs, direct-conversion, attenuator, modulator, MMIC, MESFET, personal handy phone system,
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A Resonant-Type GaAs Switch IC with Low Distortion Characteristics for 1.9 GHz PHS Atsushi KAMEYAMA Katsue K.KAWAKYU Yoshiko IKEDA Masami NAGAOKA Kenji ISHIDA Tomohiro NITTA Misao YOSHIMURA Yoshiaki KITAURA Naotaka UCHITOMI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1997/06/25 Vol. E80-C No. 6 pp. 788-793 Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeterwave High-power Devices) Category: Keyword: MMIC, SPDT switch IC, GaAs MESFET, resonator, single power supply operation, personal handy phone system,
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Aluminum-Graded-Base PNp AlGaAs/GaAs Heterojunction Transistor with 37 GHz Cut-Off Frequency Atsushi KAMEYAMA Alan MASSENGALE Changhong DAI James S. HARRIS, Jr.
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1996/04/25 Vol. E79-C No. 4 pp. 518-523 Type of Manuscript: Special Section PAPER (Special Issue on Ultra-High-Speed LSIs) Category: Keyword: HBT, Pnp, AlGaAs/GaAs, complementary circuit, graded base,
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