Atsushi KAMEYAMA


Ultralow-Voltage MTCMOS/SOI Circuits for Batteryless Mobile System
Takakuni DOUSEKI Masashi YONEMARU Eiji IKUTA Akira MATSUZAWA Atsushi KAMEYAMA Shunsuke BABA Tohru MOGAMI Hakaru KYURAGI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2004/04/01
Vol. E87-C  No. 4  pp. 437-447
Type of Manuscript:  INVITED PAPER (Special Section on Low-Power System LSI, IP and Related Technologies)
Category: 
Keyword: 
ultralow voltageultralow powerMTCMOS/SOIbatterylessambient energy
 Summary | Full Text:PDF

A 2-V Operation Resonant-Type T/R-Switch with Low Distortion Characteristics for 1. 9-GHz PHS
Katsue K. KAWAKYU Yoshiko IKEDA Masami NAGAOKA Atsushi KAMEYAMA Naotaka UCHITOMI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1998/06/25
Vol. E81-C  No. 6  pp. 862-867
Type of Manuscript:  Special Section PAPER (Special Issue on Microwave and Millimeter-Wave Module Technology)
Category: Functional Modules and the Design Technology
Keyword: 
resonant-typeT/R-switchlow distortionPHS2-V operation
 Summary | Full Text:PDF

Single Low 2. 4-V Supply Operation GaAs Power MESFET Amplifier with Low-Distortion Gain-Variable Attenuator for 1. 9-GHz PHS Applications
Masami NAGAOKA Hirotsugu WAKIMOTO Toshiki SESHITA Katsue K. KAWAKYU Yoshiaki KITAURA Atsushi KAMEYAMA Naotaka UCHITOMI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1998/06/25
Vol. E81-C  No. 6  pp. 911-915
Type of Manuscript:  Special Section LETTER (Special Issue on Microwave and Millimeter-Wave Module Technology)
Category: 
Keyword: 
power amplifiergallium arsenidePHSlow distortionvariable gainsingle voltage supply
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A Buried-Channel Self-Aligned GaAs MESFET with High Power-Efficiency and Low Noise-Figure for 1.9-GHz Single-Chip Front-End MMICs
Kazuya NISHIHORI Atsushi KAMEYAMA Yoshiaki KITAURA Yoshikazu TANABE Masakatsu MIHARA Misao YOSHIMURA Mayumi HIROSE Naotaka UCHITOMI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/12/25
Vol. E80-C  No. 12  pp. 1586-1591
Type of Manuscript:  Special Section PAPER (Special Issue on Low-Power and High-Speed LSI Technologies)
Category: 
Keyword: 
GaAs MESFETburied channelion-implantationMMICpower-added efficiencynoise figure
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Gate Current Control Method by Pull-Down FET's for 0-28 dB GaAs Variable Attenuator in Direct-Conversion Modulator IC for 1.9 GHz PHS
Tadahiro SASAKI Shoji OTAKA Tadahiko MAEDA Toshiyuki UMEDA Kazuya NISHIHORI Atsushi KAMEYAMA Mayumi HIROSE Yoshiaki KITAURA Naotaka UCHITOMI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/06/25
Vol. E80-C  No. 6  pp. 794-799
Type of Manuscript:  Special Section PAPER (Special Issue on Microwave and Millimeterwave High-power Devices)
Category: 
Keyword: 
GaAsdirect-conversionattenuatormodulatorMMICMESFETpersonal handy phone system
 Summary | Full Text:PDF

A Resonant-Type GaAs Switch IC with Low Distortion Characteristics for 1.9 GHz PHS
Atsushi KAMEYAMA Katsue K.KAWAKYU Yoshiko IKEDA Masami NAGAOKA Kenji ISHIDA Tomohiro NITTA Misao YOSHIMURA Yoshiaki KITAURA Naotaka UCHITOMI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/06/25
Vol. E80-C  No. 6  pp. 788-793
Type of Manuscript:  Special Section PAPER (Special Issue on Microwave and Millimeterwave High-power Devices)
Category: 
Keyword: 
MMICSPDT switch ICGaAs MESFETresonatorsingle power supply operationpersonal handy phone system
 Summary | Full Text:PDF

Aluminum-Graded-Base PNp AlGaAs/GaAs Heterojunction Transistor with 37 GHz Cut-Off Frequency
Atsushi KAMEYAMA Alan MASSENGALE Changhong DAI James S. HARRIS, Jr. 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/04/25
Vol. E79-C  No. 4  pp. 518-523
Type of Manuscript:  Special Section PAPER (Special Issue on Ultra-High-Speed LSIs)
Category: 
Keyword: 
HBTPnpAlGaAs/GaAscomplementary circuitgraded base
 Summary | Full Text:PDF