Atsushi FUKURODA


High-Speed SOI Bipolar Transistors Using Bonding and Thinning Techniques
Manabu KOJIMA Atsushi FUKURODA Tetsu FUKANO Naoshi HIGAKI Tatsuya YAMAZAKI Toshihiro SUGII Yoshihiro ARIMOTO Takashi ITO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1993/04/25
Vol. E76-C  No. 4  pp. 572-576
Type of Manuscript:  Special Section PAPER (Special Issue on Sub-Half Micron Si Device and Process Technologies)
Category: Device Technology
Keyword: 
SOI bipolar transistorsthin buried layerwafer bondingselective polishing
 Summary | Full Text:PDF

A 4 GHz Thin-Base Lateral Bipolar Transistor Fabricated on Bonded SOI
Naoshi HIGAKI Tetsu FUKANO Atsushi FUKURODA Toshihiro SUGII Yoshihiro ARIMOTO Takashi ITO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/12/25
Vol. E75-C  No. 12  pp. 1453-1458
Type of Manuscript:  Special Section PAPER (Special Issue on SOI (Si on Insulator) Devices)
Category: SOI Devices
Keyword: 
bonded SOIlateral bipolarsidewall self-aligning baseBiCMOSrecrystallization
 Summary | Full Text:PDF