Arvydas MATULIONIS


Hot-Electron Transport and Noise in GaN Two-Dimensional Channels for HEMTs
Arvydas MATULIONIS 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/07/01
Vol. E89-C  No. 7  pp. 913-920
Type of Manuscript:  INVITED PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
Category: 
Keyword: 
GaNAlGaNhigh-electron-mobility transistor (HEMT)two-dimensional electron gas (2DEG)microwave frequency
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