Andreas WETTSTEIN


TCAD Challenges for Heterostructure Microelectronics
Eugeny LYUMKIS Rimvydas MICKEVICIUS Oleg PENZIN Boris POLSKY Karim El SAYED Andreas WETTSTEIN Wolfgang FICHTNER 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/10/01
Vol. E86-C  No. 10  pp. 1960-1967
Type of Manuscript:  INVITED PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
Category: 
Keyword: 
TCADheterostructuredevice simulation
 Summary | Full Text:PDF(409.1KB)

Simulation of DGSOI MOSFETs with a Schrodinger-Poisson Based Mobility Model
Andreas SCHENK Andreas WETTSTEIN 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/03/01
Vol. E86-C  No. 3  pp. 385-390
Type of Manuscript:  Special Section PAPER (Special Issue on the 2002 IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'02))
Category: 
Keyword: 
device simulationDGSOI MOSFETchannel mobilityquantum effectsSchrodinger-Poisson solver
 Summary | Full Text:PDF(460KB)

On Density-Gradient Modeling of Tunneling through Insulators
Timm HOHR Andreas SCHENK Andreas WETTSTEIN Wolfgang FICHTNER 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/03/01
Vol. E86-C  No. 3  pp. 379-384
Type of Manuscript:  Special Section PAPER (Special Issue on the 2002 IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'02))
Category: 
Keyword: 
device simulationdensity-gradient modeldirect tunnelinggate leakageresonant tunneling
 Summary | Full Text:PDF(509.7KB)

Simulation of RF Noise in MOSFETs Using Different Transport Models
Andreas SCHENK Bernhard SCHMITHUSEN Andreas WETTSTEIN Axel ERLEBACH Simon BRUGGER Fabian M. BUFLER Thomas FEUDEL Wolfgang FICHTNER 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/03/01
Vol. E86-C  No. 3  pp. 481-489
Type of Manuscript:  PAPER
Category: Device Modeling and Simulation
Keyword: 
device simulationRF noiseimpedance field methodLangevin equation
 Summary | Full Text:PDF(1.4MB)

Simulation of Direct Tunneling through Stacked Gate Dielectrics by a Fully Integrated 1D-Schrodinger-Poisson Solver
Andreas WETTSTEIN Andreas SCHENK Wolfgang FICHTNER 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2000/08/25
Vol. E83-C  No. 8  pp. 1189-1193
Type of Manuscript:  Special Section PAPER (Special Issue on 1999 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'99))
Category: Gate Tunneling Simulation
Keyword: 
stacked dielectricsdirect tunnelingSchrodinger equation
 Summary | Full Text:PDF(675.8KB)