Andreas SCHENK


Simulation of DGSOI MOSFETs with a Schrodinger-Poisson Based Mobility Model
Andreas SCHENK Andreas WETTSTEIN 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/03/01
Vol. E86-C  No. 3  pp. 385-390
Type of Manuscript:  Special Section PAPER (Special Issue on the 2002 IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'02))
Category: 
Keyword: 
device simulationDGSOI MOSFETchannel mobilityquantum effectsSchrodinger-Poisson solver
 Summary | Full Text:PDF(460KB)

Single-Particle Approach to Self-Consistent Monte Carlo Device Simulation
Fabian M. BUFLER Christoph ZECHNER Andreas SCHENK Wolfgang FICHTNER 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/03/01
Vol. E86-C  No. 3  pp. 308-313
Type of Manuscript:  Special Section PAPER (Special Issue on the 2002 IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'02))
Category: 
Keyword: 
ballistic transportMonte Carlo simulationnanoscale MOSFETsnonlinear Poisson equationself-consistency
 Summary | Full Text:PDF(1.4MB)

On Density-Gradient Modeling of Tunneling through Insulators
Timm HOHR Andreas SCHENK Andreas WETTSTEIN Wolfgang FICHTNER 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/03/01
Vol. E86-C  No. 3  pp. 379-384
Type of Manuscript:  Special Section PAPER (Special Issue on the 2002 IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'02))
Category: 
Keyword: 
device simulationdensity-gradient modeldirect tunnelinggate leakageresonant tunneling
 Summary | Full Text:PDF(509.7KB)

Simulation of RF Noise in MOSFETs Using Different Transport Models
Andreas SCHENK Bernhard SCHMITHUSEN Andreas WETTSTEIN Axel ERLEBACH Simon BRUGGER Fabian M. BUFLER Thomas FEUDEL Wolfgang FICHTNER 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/03/01
Vol. E86-C  No. 3  pp. 481-489
Type of Manuscript:  PAPER
Category: Device Modeling and Simulation
Keyword: 
device simulationRF noiseimpedance field methodLangevin equation
 Summary | Full Text:PDF(1.4MB)

Simulation of Direct Tunneling through Stacked Gate Dielectrics by a Fully Integrated 1D-Schrodinger-Poisson Solver
Andreas WETTSTEIN Andreas SCHENK Wolfgang FICHTNER 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2000/08/25
Vol. E83-C  No. 8  pp. 1189-1193
Type of Manuscript:  Special Section PAPER (Special Issue on 1999 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'99))
Category: Gate Tunneling Simulation
Keyword: 
stacked dielectricsdirect tunnelingSchrodinger equation
 Summary | Full Text:PDF(675.8KB)

Effect of the Tunneling Rates on the Conductance Characteristics of Single-Electron Transistors
Andreas SCHOLZE Andreas SCHENK Wolfgang FICHTNER 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2000/08/25
Vol. E83-C  No. 8  pp. 1242-1246
Type of Manuscript:  Special Section PAPER (Special Issue on 1999 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'99))
Category: Device Modeling and Simulation
Keyword: 
single-electron tunnelingCoulomb blockadeconductance oscillationstransfer Hamiltonian formalism
 Summary | Full Text:PDF(963.9KB)

On the Origin of Tunneling Currents in Scaled Silicon Devices
Andreas SCHENK Ulrich KRUMBEIN Stephan MÜLLER Hartmut DETTMER Wolfgang FICHTNER 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/02/25
Vol. E77-C  No. 2  pp. 148-154
Type of Manuscript:  Special Section PAPER (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD 93))
Category: Device Modeling
Keyword: 
integrated electronicssemiconductor materials and devicesquantum electronics
 Summary | Full Text:PDF(567.1KB)