Andreas HOSSINGER


A Computationally Efficient Method for Three-Dimensional Simulation of Ion Implantation
Alexander BURENKOV Klaus TIETZEL Andreas HOSSINGER Jurgen LORENZ Heiner RYSSEL Siegfried SELBERHERR 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2000/08/25
Vol. E83-C  No. 8  pp. 1259-1266
Type of Manuscript:  Special Section PAPER (Special Issue on 1999 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'99))
Category: Process Modeling and Simulation
Keyword: 
ion implantationthree-dimensionalMonte-Carloanalyticalsimulation
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