| An-Sam PENG
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An Improved EEHEMT RF Noise Model for 0.25 µm InGaP pHEMT Transistor Using Verilog-A Language An-Sam PENG Lin-Kun WU | Publication:
Publication Date: 2017/05/01
Vol. E100-C
No. 5
pp. 424-429
Type of Manuscript:
Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: pHEMT, noise parameters, modeling, EEHEMT, | | Summary | Full Text:PDF(668.2KB) | |
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