Akio WAKEJIMA


High Power GaN-FET Amplifier with Reduced Memory Effects for W-CDMA Base Stations
Akio WAKEJIMA Kohji MATSUNAGA Yuji ANDO Tatsuo NAKAYAMA Yasuhiro OKAMOTO Kazuki OTA Naotaka KURODA Masahiro TANOMURA Hironobu MIYAMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2007/05/01
Vol. E90-C  No. 5  pp. 929-936
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Compound Semiconductor and Power Devices
Keyword: 
GaN-FETamplifiermemory effectsbaseband impedancedigital predistortionW-CDMA
 Summary | Full Text:PDF

High Power Density and Low Distortion InGaP Channel FETs with Field-Modulating Plate
Akio WAKEJIMA Kazuki OTA Kohji MATSUNAGA Masaaki KUZUHARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/12/01
Vol. E85-C  No. 12  pp. 2041-2045
Type of Manuscript:  Special Section PAPER (Special Issue on Low-Distortion,High-Power,High-Efficiency Active Device and Circuit Technology)
Category: 
Keyword: 
field-modulating plateInGaPfield effect transistor (FET)intermodulation distortion
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High Performance HJFET MMIC with Embedded Gate Technology for Microwave and Millimeter-Wave IC's Using EB Lithography (EMMIE)
Akio WAKEJIMA Yoichi MAKINO Katsumi YAMANOGUCHI Norihiko SAMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/11/25
Vol. E82-C  No. 11  pp. 1977-1981
Type of Manuscript:  Special Section PAPER (Special Issue on High-Frequency/High-Speed Devices for Information and Communication Systems in the 21st Century)
Category: Low Power-Consumption RF ICs
Keyword: 
GaAsHJFETMMICmillimeter wave
 Summary | Full Text:PDF