Akio OHTA


Characterization of Electron Field Emission from Multiple-Stacking Si-Based Quantum Dots
Yuto FUTAMURA Katsunori MAKIHARA Akio OHTA Mitsuhisa IKEDA Seiichi MIYAZAKI 
Publication:   
Publication Date: 2019/06/01
Vol. E102-C  No. 6  pp. 458-461
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
Si quantum dotsGe coreelectron field emissionmultiple-stacked structureelectric field concentration
 Summary | Full Text:PDF

Embedding of Ti Nanodots into SiOx and Its Impact on Resistance Switching Behaviors
Yusuke KATO Akio OHTA Mitsuhisa IKEDA Katsunori MAKIHARA Seiichi MIYAZAKI 
Publication:   
Publication Date: 2017/05/01
Vol. E100-C  No. 5  pp. 468-474
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
resistive random access memories (ReRAMs)Ti-nanodots (NDs)Si-rich oxide (SiOx)
 Summary | Full Text:PDF

Resistance-Switching Characteristics of Si-rich Oxide Evaluated by Using Ni Nanodots as Electrodes in Conductive AFM Measurements
Akio OHTA Chong LIU Takashi ARAI Daichi TAKEUCHI Hai ZHANG Katsunori MAKIHARA Seiichi MIYAZAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2015/05/01
Vol. E98-C  No. 5  pp. 406-410
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
Resistive Random Access Memory (ReRAM)Metal Nano-dots (NDs)Si Oxide (SiOx)MIM DiodesAtomic Force Microscope (AFM)
 Summary | Full Text:PDF

Control of Interfacial Reaction of HfO2/Ge Structure by Insertion of Ta Oxide Layer
Kuniaki HASHIMOTO Akio OHTA Hideki MURAKAMI Seiichiro HIGASHI Seiichi MIYAZAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2013/05/01
Vol. E96-C  No. 5  pp. 674-679
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
Ge-channelhigh-k dielectricsinterfacial control layerX-ray photoelectron spectroscopyenergy band alignment
 Summary | Full Text:PDF

X-Ray Photoemission Study of SiO2/Si/Si0.55Ge0.45/Si Heterostructures
Akio OHTA Katsunori MAKIHARA Seiichi MIYAZAKI Masao SAKURABA Junichi MUROTA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2013/05/01
Vol. E96-C  No. 5  pp. 680-685
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
silicon germaniumheterostructurechemical bonding featuresvalence band alignmentX-ray photoelectron spectroscopy
 Summary | Full Text:PDF

Evaluation of Chemical Composition and Bonding Features of Pt/SiOx/Pt MIM Diodes and Its Impact on Resistance Switching Behavior
Akio OHTA Katsunori MAKIHARA Mitsuhisa IKEDA Hideki MURAKAMI Seiichiro HIGASHI Seiichi MIYAZAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2013/05/01
Vol. E96-C  No. 5  pp. 702-707
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
Resistive Random Access Memory (ReRAM)Si oxidePt electrodeschemical bonding featuresresistance switching
 Summary | Full Text:PDF

Characterization of Resistive Switching of Pt/Si-Rich Oxide/TiN System
Motoki FUKUSIMA Akio OHTA Katsunori MAKIHARA Seiichi MIYAZAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2013/05/01
Vol. E96-C  No. 5  pp. 708-713
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
resistive random access memory (ReRAM)Si oxidechemical bonding featuresX-ray photoelectron spectroscopyresistance switching property
 Summary | Full Text:PDF

Characterization of Resistance-Switching of Si Oxide Dielectrics Prepared by RF Sputtering
Akio OHTA Yuta GOTO Shingo NISHIGAKI Guobin WEI Hideki MURAKAMI Seiichiro HIGASHI Seiichi MIYAZAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/05/01
Vol. E95-C  No. 5  pp. 879-884
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
resistive random access memory (ReRAM)Si oxideRF sputteringPt electrodesresistance switching
 Summary | Full Text:PDF

Characterization of Mg Diffusion into HfO2/SiO2/Si(100) Stacked Structures and Its Impact on Detect State Densities
Akio OHTA Daisuke KANME Hideki MURAKAMI Seiichiro HIGASHI Seiichi MIYAZAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2011/05/01
Vol. E94-C  No. 5  pp. 717-723
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
high-k gate dielectricscapping layerHfO2MgOphotoemission measurements
 Summary | Full Text:PDF

Impact of Annealing Ambience on Resistive Switching in Pt/TiO2/Pt Structure
Guobin WEI Yuta GOTO Akio OHTA Katsunori MAKIHARA Hideki MURAKAMI Seiichiro HIGASHI Seiichi MIYAZAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2011/05/01
Vol. E94-C  No. 5  pp. 699-704
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
ReRAMTiO2low temperatureH2 annealingcharge trapping
 Summary | Full Text:PDF