IEICE Trans

Akio OHTA

Characterization of Electron Field Emission from Multiple-Stacking Si-Based Quantum Dots Yuto FUTAMURA Katsunori MAKIHARA Akio OHTA Mitsuhisa IKEDA Seiichi MIYAZAKI
Publication: Publication Date: 2019/06/01 Vol. E102-C No. 6 pp. 458-461 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: Si quantum dots, Ge core, electron field emission, multiple-stacked structure, electric field concentration,
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Embedding of Ti Nanodots into SiO_x and Its Impact on Resistance Switching Behaviors Yusuke KATO Akio OHTA Mitsuhisa IKEDA Katsunori MAKIHARA Seiichi MIYAZAKI
Publication: Publication Date: 2017/05/01 Vol. E100-C No. 5 pp. 468-474 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: resistive random access memories (ReRAMs), Ti-nanodots (NDs), Si-rich oxide (SiO_x),
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Resistance-Switching Characteristics of Si-rich Oxide Evaluated by Using Ni Nanodots as Electrodes in Conductive AFM Measurements Akio OHTA Chong LIU Takashi ARAI Daichi TAKEUCHI Hai ZHANG Katsunori MAKIHARA Seiichi MIYAZAKI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2015/05/01 Vol. E98-C No. 5 pp. 406-410 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: Resistive Random Access Memory (ReRAM), Metal Nano-dots (NDs), Si Oxide (SiO_x), MIM Diodes, Atomic Force Microscope (AFM),
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Control of Interfacial Reaction of HfO₂/Ge Structure by Insertion of Ta Oxide Layer Kuniaki HASHIMOTO Akio OHTA Hideki MURAKAMI Seiichiro HIGASHI Seiichi MIYAZAKI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2013/05/01 Vol. E96-C No. 5 pp. 674-679 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: Ge-channel, high-k dielectrics, interfacial control layer, X-ray photoelectron spectroscopy, energy band alignment,
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X-Ray Photoemission Study of SiO₂/Si/Si_0.55Ge_0.45/Si Heterostructures Akio OHTA Katsunori MAKIHARA Seiichi MIYAZAKI Masao SAKURABA Junichi MUROTA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2013/05/01 Vol. E96-C No. 5 pp. 680-685 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: silicon germanium, heterostructure, chemical bonding features, valence band alignment, X-ray photoelectron spectroscopy,
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Evaluation of Chemical Composition and Bonding Features of Pt/SiO_x/Pt MIM Diodes and Its Impact on Resistance Switching Behavior Akio OHTA Katsunori MAKIHARA Mitsuhisa IKEDA Hideki MURAKAMI Seiichiro HIGASHI Seiichi MIYAZAKI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2013/05/01 Vol. E96-C No. 5 pp. 702-707 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: Resistive Random Access Memory (ReRAM), Si oxide, Pt electrodes, chemical bonding features, resistance switching,
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Characterization of Resistive Switching of Pt/Si-Rich Oxide/TiN System Motoki FUKUSIMA Akio OHTA Katsunori MAKIHARA Seiichi MIYAZAKI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2013/05/01 Vol. E96-C No. 5 pp. 708-713 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: resistive random access memory (ReRAM), Si oxide, chemical bonding features, X-ray photoelectron spectroscopy, resistance switching property,
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Characterization of Resistance-Switching of Si Oxide Dielectrics Prepared by RF Sputtering Akio OHTA Yuta GOTO Shingo NISHIGAKI Guobin WEI Hideki MURAKAMI Seiichiro HIGASHI Seiichi MIYAZAKI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2012/05/01 Vol. E95-C No. 5 pp. 879-884 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: resistive random access memory (ReRAM), Si oxide, RF sputtering, Pt electrodes, resistance switching,
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Characterization of Mg Diffusion into HfO₂/SiO₂/Si(100) Stacked Structures and Its Impact on Detect State Densities Akio OHTA Daisuke KANME Hideki MURAKAMI Seiichiro HIGASHI Seiichi MIYAZAKI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2011/05/01 Vol. E94-C No. 5 pp. 717-723 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: high-k gate dielectrics, capping layer, HfO₂, MgO, photoemission measurements,
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Impact of Annealing Ambience on Resistive Switching in Pt/TiO₂/Pt Structure Guobin WEI Yuta GOTO Akio OHTA Katsunori MAKIHARA Hideki MURAKAMI Seiichiro HIGASHI Seiichi MIYAZAKI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2011/05/01 Vol. E94-C No. 5 pp. 699-704 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: ReRAM, TiO₂, low temperature, H₂ annealing, charge trapping,
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