Akihiko KASUKAWA


FOREWORD
Akihiko KASUKAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2014/07/01
Vol. E97-C  No. 7  pp. 718-718
Type of Manuscript:  FOREWORD
Category: 
Keyword: 
 Summary | Full Text:PDF | (Errata [Uploaded on August 1,2014])

1.3µm AlGaInAs MQW Inner-Stripe Laser Diodes
Ryusuke NAKASAKI Mitsumasa ITO Satoshi ARAKAWA Akihiko KASUKAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/05/01
Vol. E86-C  No. 5  pp. 749-752
Type of Manuscript:  Special Section PAPER (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
Category: 
Keyword: 
AlGaInAslaserwaveguidehigh power
 Summary | Full Text:PDF

Transverse Mode Control and Reduction of Thermal Resistance in 850 nm Oxide Confined VCSELs
Natsumi UEDA Masato TACHIBANA Norihiro IWAI Tatsuyuki SHINAGAWA Maiko ARIGA Yasumasa SASAKI Noriyuki YOKOUCHI Yasukazu SHIINA Akihiko KASUKAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/01/01
Vol. E85-C  No. 1  pp. 64-70
Type of Manuscript:  Special Section PAPER (Special Issue on Recent Progress in Semiconductor Lasers and Light-Emitting Devices)
Category: 
Keyword: 
oxide confined VCSELtransverse modedielectric aperturethermal resistanceAlAs
 Summary | Full Text:PDF

Static Characteristics of GaInAsP/InP Graded-Index Separate-Confinement-Heterostructure Quantum Well Laser Diodes (GRIN-SCH QW LDs) Grown by Metalorganic Chemical Vapor Deposition (MOCVD)
Akihiko KASUKAWA Narihito MATSUMOTO Takeshi NAMEGAYA Yoshihiro IMAJO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/12/25
Vol. E75-C  No. 12  pp. 1541-1554
Type of Manuscript:  PAPER
Category: Opto-Electronics
Keyword: 
GRIN-SCH-MQWMOCVDGaInAsP/InPburied heterostructurelaser diodes
 Summary | Full Text:PDF

Effect of Well Number in 1.3 µm GaInAsP Graded-Index Separate-Confinement-Heterostructure Multiple-Quantum-Well (GRIN-SCH-MQW) Laser Diodes
Akihiko KASUKAWA Yoshihiro IMAJO Ian John MURGATROYD Hiroshi OKAMOTO 
Publication:   IEICE TRANSACTIONS (1976-1990)
Publication Date: 1990/01/25
Vol. E73-E  No. 1  pp. 59-62
Type of Manuscript:  Special Section PAPER (Special Issue on International Conference on Integrated Optics and Optical Fiber Communication)
Category: Optical Semiconductor Devices and OEICs
Keyword: 
 Summary | Full Text:PDF

Transverse Mode Characteristics of 1.3µm GaInAsP/InP Buried Crescent Lasers by the Use of a Reactive Ion Beam Etching Process
Akihiko KASUKAWA Masayuki IWASE Narihito MATSUMOTO Toshihiko MAKINO Susumu KASHIWA 
Publication:   IEICE TRANSACTIONS (1976-1990)
Publication Date: 1988/09/25
Vol. E71-E  No. 9  pp. 837-839
Type of Manuscript:  LETTER
Category: Quantum Electronics
Keyword: 
 Summary | Full Text:PDF