Characteristics of Dielectric Loss and Leakage Current of Thin Film Capacitor Fabricated by Anodizing the Ta/Hf Alternately layered Films

Tsuyoshi DOBASHI  

Publication
C - Abstracts of IEICE TRANSACTIONS on Electronics (Japanese Edition)   Vol.J99-C   No.5   pp.276-280
Publication Date: 2016/05/01
Online ISSN: 1881-0217
DOI: 
Type of Manuscript: LETTER
Category: 
Keyword: 
alternately layered films,  thin film capacitor,  anodization,  dielectric loss properties,  leakage current properties,  

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Summary: 
The leakage current of 0.5 × 10-9 A/cm2 and low loss capacitor of tan δ ≈ 0.005 up to 140V formation voltage have been obtained by anodizing Ta/Hf alternately layered films which are laminated by 20nm thickness. This capacitor maintained low loss characteristics during the heat-treatment at 300℃.