Microjoining Using Compliant Bump Technology for Heterogeneous Integration

Tanemasa ASANO 

Publication
C - Abstracts of IEICE TRANSACTIONS on Electronics (Japanese Edition)  Vol.J95-C  No.8  pp.148-155
Publication Date: 2012/08/01
Online ISSN: 1881-0217
Print ISSN: 1345-2827
Type of Manuscript: Special Section PAPER (Special Issue on Expectations and Challenges of LSI and High-density Packaging Technology for Heterogeneous Device Integration)
Category: 
Keyword: 
3D LSI,  microjoining,  micro-bump,  through silicon via,  TSV, 

Full Text(in Japanese): PDF(986KB)

Summary: 
A novel microjoining technology, which will greatly facilitate integration of heterogeneous integration of materials and functions with silicon CMOS, is introduced. The technology is built up with a cone-shaped micro-bump electrode. While the joining behavior is simple plastic deformation of the sharp end of the bump electrode, it provides superb properties for microjoining in terms of low strain, small pitch, connecting pin counts, and low temperature bonding including room temperature bonding. The bump can be made of Au and Cu using conventional electro-plating. The process can be integrated with through silicon via. Application of the technology to backside-illuminated CMOS image sensor and near infrared image sensor is described. Besides, bonding of LSI chips to circuit on a organic resin film is demonstrated for flexible electronics.