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Preparation and Characterization of Thermal Oxidization Anodized Si with a Low-k Dielectric Constant
Tomihiro SONEGAWA Kazuhiro UEHARA Takehiro MAEHAMA
C - Abstracts of IEICE TRANSACTIONS on Electronics (Japanese Edition)
Publication Date: 2011/10/01
Online ISSN: 1881-0217
Print ISSN: 1345-2827
Type of Manuscript: PAPER
anodized silicon, oxidized porous silicon, Low-k material, porosity,
Full Text(in Japanese): PDF(2.5MB)
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Low-k dielectric thin film materials have been successfully prepared by thermal oxidization using anodized silicon. Anodized silicon layers were prepared using low resistivity n-type silicon single crystal. The anodized silicon layers, of which porosities depend on anodized current densities, were oxygenated in the oxygen gas at 1,000°C. There is no significant change of the dielectric constant in the frequency range of 5102 5106 Hz. The dielectric constant, k = 3.0, is gotten for the samples with the porosity of 73% anodised by current density of 100 mA/cm2.