Preparation and Characterization of Thermal Oxidization Anodized Si with a Low-k Dielectric Constant

Tomihiro SONEGAWA  Kazuhiro UEHARA  Takehiro MAEHAMA  

C - Abstracts of IEICE TRANSACTIONS on Electronics (Japanese Edition)   Vol.J94-C   No.10   pp.316-322
Publication Date: 2011/10/01
Online ISSN: 1881-0217
Print ISSN: 1345-2827
Type of Manuscript: PAPER
anodized silicon,  oxidized porous silicon,  Low-k material,  porosity,  

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Low-k dielectric thin film materials have been successfully prepared by thermal oxidization using anodized silicon. Anodized silicon layers were prepared using low resistivity n-type silicon single crystal. The anodized silicon layers, of which porosities depend on anodized current densities, were oxygenated in the oxygen gas at 1,000°C. There is no significant change of the dielectric constant in the frequency range of 5102 5106 Hz. The dielectric constant, k = 3.0, is gotten for the samples with the porosity of 73% anodised by current density of 100 mA/cm2.