Study on Diffusion Phenomena and Dissipation Factor of Valve Metals (Hf, Zr, Nb, Ta) Double-Layered Anodized Thin Film Capacitor

Tsuyoshi DOBASHI   

Publication
C - Abstracts of IEICE TRANSACTIONS on Electronics (Japanese Edition)   Vol.J92-C   No.6   pp.225-228
Publication Date: 2009/06/01
Online ISSN: 1881-0217
Print ISSN: 1345-2827
Type of Manuscript: LETTER
Category: 
Keyword: 
(Hf/Nb ,  Zr/Nb ,  Hf/Ta ,  Zr/Ta) double-layered anodized thin films ,  dissipation factor ,  diffusion phenomena ,  

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Summary: 
I examined the diffusion of the composed elements at Hf/Nb, Zr/Nb, Hf/Ta and Zr/Ta double-layered anodized films and the loss characteristic which are simultaneous with those. As a result, the diffusion of metals from the under layer to the upper layered film was observed at the only Hf/Nb double-layered anodized film, and low dielectric loss (tan δ = 0.004) was obtained at the Hf/Ta double-layered anodized film capacitor.