Electrical Properties of 2.1-D Organic Interposer Using Photosensitive Film

Yutaka UEMATSU  Nobuyuki USHIFUSA  Hitoshi ONOZEKI  

C - Abstracts of IEICE TRANSACTIONS on Electronics (Japanese Edition)   Vol.J101-C   No.2   pp.83-90
Publication Date: 2018/02/01
Online ISSN: 1881-0217
Type of Manuscript: Special Section PAPER (Special Section on Heterogeneous Integration Packaging Technologies Realizing Next Generation Mobility Devices)
system in package,  2.1D,  organic interposer,  HBM,  transfer properties,  

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In this report, we have proposed 2.1D System in Package (SiP) structure using newly developed photosensitive insulating film for low cost assembly method applying HBM. We also summarized wiring specification of it and electrical transfer properties utilizing HBM. We have confirmed that fine pattern forming of developed photosensitive film such as L/S = 2/2 µm and VIA diameter of less than 8 µm from an experimental results of TEG samples. These results suggest that we can make layout of HBM wiring with adding only 3 high density layers on conventional package substrate. Furthermore, the electrical transfer properties for HBM is better than that of 2.5D type SiP from simulation results. For over 3 Gbps transfer, we have demonstrated the effectiveness of GND shield insertion and applying hyperbola termination to obtain large eye-open.