Development of Evaluation Method of TSV Sidewall Interface Using Multi-well-structured TSV

Yohei SUGAWARA  Hisashi KINO  Takafumi FUKUSHIMA  Tetsu TANAKA  

Publication
C - Abstracts of IEICE TRANSACTIONS on Electronics (Japanese Edition)   Vol.J101-C   No.2   pp.58-65
Publication Date: 2018/02/01
Online ISSN: 1881-0217
Type of Manuscript: Special Section PAPER (Special Section on Heterogeneous Integration Packaging Technologies Realizing Next Generation Mobility Devices)
Category: 
Keyword: 
TSV,  3D IC,  charge pumping method,  reliability,  

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Summary: 
To evaluate the depth-dependent TSV-liner interface states, we have proposed a novel evaluation method using multi-well-structured TSV and charge pumping technique. We fabricated the test structure with multi-well-structured TSV in multi-well region by via-last/backside-via process. The multi-well-structured TSV had MOSFETs formed along TSV sidewall. We measured charge pumping current of these MOSFETs to evaluate the surface state. The results showed the different peaks from each well. These results have demonstrated that multi-well-structured TSV can evaluate the depth-dependent interface states.