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Asymmetric Hysteresis Current-Voltage Characteristics of Al/Al2O3/Cu2Se/Au Diodes
Yoshinori EMA Mantaro OGAWA Takahiro TAKAHASHI
C - Abstracts of IEICE TRANSACTIONS on Electronics (Japanese Edition)
Publication Date: 2018/02/01
Online ISSN: 1881-0217
Type of Manuscript: LETTER
Al2O3, Cu2Se, hysteresis I-V, memory, conductive path,
Full Text(in Japanese): PDF(687.3KB)
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Al/Al2O3/Cu2Se/Au diodes showed asymmetric hysteresis current-voltage characteristics, in which high resistance state changed to low resistance state by increasing forward voltage. The conductive state is preserved like a memory. A model of conduction mechanism has been proposed.