Asymmetric Hysteresis Current-Voltage Characteristics of Al/Al2O3/Cu2Se/Au Diodes

Yoshinori EMA  Mantaro OGAWA  Takahiro TAKAHASHI  

Publication
C - Abstracts of IEICE TRANSACTIONS on Electronics (Japanese Edition)   Vol.J101-C   No.2   pp.119-123
Publication Date: 2018/02/01
Online ISSN: 1881-0217
DOI: 
Type of Manuscript: LETTER
Category: 
Keyword: 
Al2O3,  Cu2Se,  hysteresis I-V,  memory,  conductive path,  

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Summary: 
Al/Al2O3/Cu2Se/Au diodes showed asymmetric hysteresis current-voltage characteristics, in which high resistance state changed to low resistance state by increasing forward voltage. The conductive state is preserved like a memory. A model of conduction mechanism has been proposed.