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Improvement of Single-Electron Digital Logic Gates by Utilizing Input Discretizers
Tran THI THU HUONG Hiroshi SHIMADA Yoshinao MIZUGAKI
IEICE TRANSACTIONS on Electronics
Publication Date: 2016/02/01
Online ISSN: 1745-1353
Type of Manuscript: PAPER
Category: Electronic Circuits
coulomb blockade, four-junction inverter, input discretizer, single-electron tunneling,
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We numerically demonstrated the improvement of single-electron (SE) digital logic gates by utilizing SE input discretizers (IDs). The parameters of the IDs were adjusted to achieve SE tunneling at the threshold voltage designed for switching. An SE four-junction inverter (FJI) with an ID (ID-FJI) had steep switching characteristics between the high and low output voltage levels. The limiting temperature and the critical parameter margins were evaluated. An SE NAND gate with IDs also achieved abrupt switching characteristics between output logic levels.