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Resistance-Switching Characteristics of Si-rich Oxide Evaluated by Using Ni Nanodots as Electrodes in Conductive AFM Measurements
Akio OHTA Chong LIU Takashi ARAI Daichi TAKEUCHI Hai ZHANG Katsunori MAKIHARA Seiichi MIYAZAKI
IEICE TRANSACTIONS on Electronics
Publication Date: 2015/05/01
Online ISSN: 1745-1353
Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Resistive Random Access Memory (ReRAM), Metal Nano-dots (NDs), Si Oxide (SiOx), MIM Diodes, Atomic Force Microscope (AFM),
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Ni nanodots (NDs) used as nano-scale top electrodes were formed on a 10-nm-thick Si-rich oxide (SiOx)/Ni bottom electrode by exposing a 2-nm-thick Ni layer to remote H2-plasma (H2-RP) without external heating, and the resistance-switching behaviors of SiOx were investigated from current-voltage (I–V) curves. Atomic force microscope (AFM) analyses confirmed the formation of electrically isolated Ni NDs as a result of surface migration and agglomeration of Ni atoms promoted by the surface recombination of H radicals. From local I–V measurements performed by contacting a single Ni ND as a top electrode with a Rh coated Si cantilever, a distinct uni-polar type resistance switching behavior was observed repeatedly despite an average contact area between the Ni ND and the SiOx as small as ∼ 1.9 × 10-12cm2. This local I–V measurement technique is quite a simple method to evaluate the size scalability of switching properties.