Impact of Cell Distance and Well-contact Density on Neutron-induced Multiple Cell Upsets

Jun FURUTA  Kazutoshi KOBAYASHI  Hidetoshi ONODERA  

IEICE TRANSACTIONS on Electronics   Vol.E98-C   No.4   pp.298-303
Publication Date: 2015/04/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E98.C.298
Type of Manuscript: Special Section PAPER (Special Section on Solid-State Circuit Design---Architecture, Circuit, Device and Design Methodology)
Neutron-induced Soft Error,  Multiple Cell Upset (MCU),  cell distance,  well-contact density,  Flip-Flop,  

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We measure neutron-induced Single Event Upsets (SEUs) and Multiple Cell Upsets (MCUs) on Flip-Flops (FFs) in a 65-nm bulk CMOS process in order to evaluate dependence of MCUs on cell distance and well-contact density using four different shift registers. Measurement results by accelerated tests show that MCU/SEU is up to 23.4% and it is exponentially decreased by the distance between latches on FFs. MCU rates can be drastically reduced by inserting well-contact arrays between FFs. The number of MCUs is reduced from 110 to 1 by inserting well-contact arrays under power and ground rails.