Low-Power Circuit Applicability of Hetero-Gate-Dielectric Tunneling Field-Effect Transistors (HG TFETs)

Gibong LEE  Woo Young CHOI  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E95-C   No.5   pp.910-913
Publication Date: 2012/05/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E95.C.910
Print ISSN: 0916-8516
Type of Manuscript: BRIEF PAPER
Category: 
Keyword: 
low power,  propagation delay,  energy dissipation,  tunneling field-effect transistor (TFET),  

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Summary: 
We have investigated the low-power circuit applicability of hetero-gate-dielectric tunneling field-effect transistors (HG TFETs). Based on the device-level comparison of HG, SiO2-only and high-k-only TFETs, their circuit performance and energy consumption have been discussed. It has been shown that HG TFETs can deliver 14400x higher performance than the SiO2-only TFETs and 17x higher performance than the high-k-only TFETs due to its higher on current and lower capacitance at the same static power, same power supply. It has been revealed that HG TFETs have better voltage scalability than the others. It is because HG TFETs dissipate only 8% of energy consumption of SiO2-only TFETs and 17% of that of high-k-only TFETs under the same performance condition.