Analysis of Low Loss and Wideband Characteristics for Lumped Element Isolators Implemented by Using Tunnel Diodes

Nobuhiko TANAKA  Mitsufumi SAITO  Michihiko SUHARA  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E94-C   No.5   pp.820-825
Publication Date: 2011/05/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E94.C.820
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
isolator,  RTD,  HEMT,  unidirectional characteristics,  millimeter wave,  

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Summary: 
Tunnel diodes are some of 2-port devices with negative differential resistance (NDR). In this paper, we propose a low insertion loss isolator, which can be designed to operate up to sub-millimeter region, by using resonant tunneling diodes (RTDs) and a HEMT. Small-signal analyses are performed to confirm insertion loss and unidirectional characteristics for the proposed active isolator. It is found that unidirectional amplifications as well as isolation characteristics could be expected below sub-millimeter waveband as a result of numerical calculations.