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Temperature-Independent Hole Mobility in Field-Effect Transistors Based on Liquid-Crystalline Semiconductors
Masahiro FUNAHASHI Fapei ZHANG Nobuyuki TAMAOKI
IEICE TRANSACTIONS on Electronics
Publication Date: 2011/11/01
Online ISSN: 1745-1353
Print ISSN: 0916-8516
Type of Manuscript: INVITED PAPER (Special Section on Electronic Displays)
liquid-crystalline semiconductor, field-effect transistor, carrier transport, field-effect mobility, phenylterthiophene,
Full Text: FreePDF(1.1MB)
Thin-film transistors based on Liquid-crystalline phenylterthiophenes, 3-TTPPh-5 and 3-TTPPhF4-6 are fabricated with a spin-coating method. The devices exhibit p-type operation with the mobility on the order of 10-2 cm2V-1s-1. The field-effect mobilities of the transistors using 3-TTPPh-5 and 3-TTPPhF4-6 are almost independent of the temperature above room temperature. In particular, the temperature range in which the mobility is constant is between 230 and 350 K for 3-TTPPh-5.