A De-Embedding Method Using Different-Length Transmission Lines for mm-Wave CMOS Device Modeling

Naoki TAKAYAMA  Kota MATSUSHITA  Shogo ITO  Ning LI  Keigo BUNSEN  Kenichi OKADA  Akira MATSUZAWA 

Publication
IEICE TRANSACTIONS on Electronics  Vol.E93-C  No.6  pp.812-819
Publication Date: 2010/06/01
Online ISSN: 1745-1353
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Analog Circuits and Related SoC Integration Technologies)
Category: 
Keyword: 
de-embedding,  S-parameter measurement,  mm-wave,  RF CMOS,  transmission line, 

Full Text: PDF

Summary: 
This paper proposes a de-embedding method for on-chip S-parameter measurements at mm-wave frequency. The proposed method uses only two transmission lines with different length. In the proposed method, a parasitic-component model extracted from two transmission lines can be used for de-embedding for other-type DUTs like transistor, capacitor, inductor, etc. The experimental results show that the error in characteristic impedance between the different-length transmission lines is less than 0.7% above 40 GHz. The extracted pad model is also shown.