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On-Chip Charged Device Model ESD Protection Design Method Using Very Fast Transmission Line Pulse System for RF ICs
IEICE TRANSACTIONS on Electronics Vol.E93-C No.5 pp.625-630
Publication Date: 2010/05/01
Online ISSN: 1745-1353
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Analog/RF Devices
electrostatic discharge (ESD),
charged device model (CDM),
very-fast transmission line pulse system,
low voltage triggered SCR devices,
radio pulse integrated circuits (RF ICs),
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An on-chip Charged Device Model (CDM) ESD protection method for RF ICs is proposed in a 0.13 µm RF process and evaluated by using very fast Transmission Line Pulse (vf-TLP) system. Key design parameters such as triggering voltage (Vt1) and the oxide breakdown voltage from the vf-TLP measurement are used to design input ESD protection circuits for a RF test chip. The characterization and the behavior of a Low Voltage Triggered Silicon Controlled Rectifier (SCR) which used for ESD protection clamp under vf-TLP measurements are also reported. The results measured by vf-TLP system showed that the triggering voltage decreased and the second breakdown current increased in comparison with the results measured by a standard 100 ns TLP system. From the HBM/ CDM testing, the RF test chip successfully met the requested RF ESD withstand level, HBM 1 kV, MM 100 V and CDM 500 V.