Transient Characteristic of Fabricated Magnetic Tunnel Junction (MTJ) Programmed with CMOS Circuit

Masashi KAMIYANAGI  Fumitaka IGA  Shoji IKEDA  Katsuya MIURA  Jun HAYAKAWA  Haruhiro HASEGAWA  Takahiro HANYU  Hideo OHNO  Tetsuo ENDOH  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E93-C   No.5   pp.602-607
Publication Date: 2010/05/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E93.C.602
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Flash/Advanced Memory
Keyword: 
spin-transfer torque random access memory (STT-RAM),  tunnel magnetoresistance (TMR),  spin-injection,  magnetic tunnel junction (MTJ),  CMOS,  

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Summary: 
In this paper, it is shown that our fabricated MTJ of 60180 nm2, which is connected to the MOSFET in series by 3 levels via and 3 levels metal line, can dynamically operate with the programming current driven by 0.14 µm CMOSFET. In our measurement of transient characteristic of fabricated MTJ, the pulse current, which is generated by the MOSFET with an applied pulse voltage of 1.5 V to its gate, injected to the fabricated MTJ connected to the MOSFET in series. By using the current measurement technique flowing in MTJ with sampling period of 10 nsec, for the first time, we succeeded in monitor that the transition speed of the resistance change of 60180 nm2 MTJ is less than 30 ns with its programming current of 500 µA and the resistance change of 1.2 kΩ.